Supertex inc.

Supertex inc.

www.supertex.com

LP1030D

Doc.# DSFP-LP1030D

A031414

Features

Applications

300V, Dual P-Channel

Enhancement-Mode Lateral MOSFET

General Description

The LP1030D is a dual high voltage P-channel enhancement-

mode (normally-off) lateral MOSFET. Each MOSFET has

integrated gate-to-source resistor and gate-to-source Zener

diode. This allows the device to be easily driven with a

capacitively coupled gate drive circuit.

The LP1030D utilizes an advanced lateral MOSFET structure

and Supertex’s well-proven silicon-gate manufacturing

process. This combination produces devices with the power

handling capabilities of bipolar transistors and with the high

input impedance and positive temperature coefficient inherent

in MOS devices.

Characteristic of all MOS structures, these devices are free

from thermal runaway and thermally-induced secondary

breakdown.

Absolute Maximum Ratings

Parameter

Value

Drain-to-source voltage

BV

DSS

Drain-to-gate voltage

BV

DGS

Gate-Source voltage

-16V to +1.0V

Operating temperature range

-25°C to 125°C

Absolute Maximum Ratings are those values beyond which damage to

the device can occur. Functional operation under these conditions is not

implied. Continuous operation of the device at the absolute rating level

may affect device reliability. All voltages are referenced to device ground.

Pin Configuration

5-Lead SOT-23

(Top View)

5-Lead SOT-23

Package Marking

Package may or may not include the following marks: Si or

Typical Thermal Resistance

Package

θ

ja

5-Lead SOT-23

253°C/W

Note:

Thermal testboard per JEDEC JESD51-7

Ordering Information

Part Number

Package Option

Packing

LP1030DK1-G

5-Lead SOT-23

2500/Reel

Product Summary

BV

DSS

(V)

R

DS(ON)

(typ Ω)

V

GS(th)

(max V)

I

D(ON)

(min mA)

-300

180

-2.4

-50

G1

G2

S1,2

D1

D2

= “Green” Packaging

-G denotes a lead (Pb)-free / RoHS compliant package