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BFP520F Datenblatt(PDF) 2 Page - Infineon Technologies AG |
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BFP520F Datenblatt(HTML) 2 Page - Infineon Technologies AG |
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2 / 6 page ![]() 2013-09-19 2 BFP520F Electrical Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V(BR)CEO 2.5 3 3.5 V Collector-emitter cutoff current VCE = 10 V, VBE = 0 ICES - - 10 µA Collector-base cutoff current VCB = 5 V, IE = 0 ICBO - - 200 mA Emitter-base cutoff current VEB = 1 V, IC = 0 IEBO - - 35 µA DC current gain IC = 20 mA, VCE = 2 V, pulse measured hFE 70 110 170 - 1For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation) |
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