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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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AUIRF540Z Datenblatt(PDF) 2 Page - Infineon Technologies AG |
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AUIRF540Z Datenblatt(HTML) 2 Page - Infineon Technologies AG |
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2 / 12 page  AUIRF540Z/S 2 2015-9-30 Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11) Limited by TJmax , starting TJ = 25°C, L = 0.46mH, RG = 25, IAS = 20A, VGS =10V. Part not recommended for use above this value. Pulse width 1.0ms; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. This value determined from sample failure population, TJ = 25°C, L = 0.46mH, RG = 25, IAS = 20A, VGS =10V. This is only applied to TO-220AB package. This is applied to D2Pak When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994 Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 100 ––– ––– V VGS = 0V, ID = 250µA V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.093 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– 21 26.5 m VGS = 10V, ID = 22A VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA gfs Forward Trans conductance 36 ––– ––– S VDS = 25V, ID = 22A IDSS Drain-to-Source Leakage Current ––– ––– 20 µA VDS =100V, VGS = 0V ––– ––– 250 VDS = 100V,VGS = 0V,TJ =125°C IGSS Gate-to-Source Forward Leakage ––– ––– 200 nA VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -200 VGS = -20V Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Qg Total Gate Charge ––– 42 63 nC ID = 22A Qgs Gate-to-Source Charge ––– 9.7 ––– VDS = 80V Qgd Gate-to-Drain Charge ––– 15 ––– VGS = 10V td(on) Turn-On Delay Time ––– 15 ––– ns VDD = 50V tr Rise Time ––– 51 ––– ID = 22A td(off) Turn-Off Delay Time ––– 43 ––– RG= 12 tf Fall Time ––– 39 ––– VGS = 10V LD Internal Drain Inductance ––– 4.5 ––– nH Between lead, 6mm (0.25in.) LS Internal Source Inductance ––– 7.5 ––– from package and center of die contact Ciss Input Capacitance ––– 1770 ––– pF VGS = 0V Coss Output Capacitance ––– 180 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 100 ––– ƒ = 1.0MHz, See Fig. 5 Coss Output Capacitance ––– 730 ––– VGS = 0V, VDS = 1.0V ƒ = 1.0MHz Coss Output Capacitance ––– 110 ––– VGS = 0V, VDS = 80V ƒ = 1.0MHz Coss eff. Effective Output Capacitance ––– 170 ––– VGS = 0V, VDS = 0V to 80V Diode Characteristics Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current ––– ––– 36 A MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current ––– ––– 140 integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C,IS = 22A,VGS = 0V trr Reverse Recovery Time ––– 33 50 ns TJ = 25°C ,IF = 22A, VDD = 50V Qrr Reverse Recovery Charge ––– 41 62 nC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) |
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