AUIRLS4030-7P datasheet(2/10 Pages) INFINEON

2 / 10 page

AUIRLS4030-7P

2015-11-6

Notes:





Repetitive rating; pulse width limited by max. junction temperature.



Limited by TJmax, starting TJ = 25°C, L = 0.05mH, RG = 25, IAS = 110A, VGS =10V. Part not recommended for use above this value.



ISD 110A, di/dt 1520A/µs, VDD V(BR)DSS, TJ  175°C.



Pulse width

400µs; duty cycle  2%.



Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.



Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.



When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to

application note #AN-994



R is measured at TJ approximately 90°C.



RJC value shown is at time zero.

Static @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

V(BR)DSS

Drain-to-Source Breakdown Voltage

100

–––

VGS = 0V, ID = 250µA

V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient

–––

0.10

–––

V/°C Reference to 25°C, ID = 5mA 

RDS(on)

Static Drain-to-Source On-Resistance

–––

3.2

3.9



VGS = 10V, ID = 110A 

–––

3.3

4.1

VGS = 4.5V, ID = 94A 

VGS(th)

Gate Threshold Voltage

1.0

–––

2.5

VDS = VGS, ID = 250µA

gfs

Forward Trans conductance

250

–––

VDS = 25V, ID = 110A

IDSS

Drain-to-Source Leakage Current

–––

µA

VDS = 100V, VGS = 0V

–––

250

VDS = 100V,VGS = 0V,TJ =125°C

IGSS

Gate-to-Source Forward Leakage

–––

100

VGS = 16V

Gate-to-Source Reverse Leakage

–––

-100

VGS = -16V

Internal Gate Resistance

–––

2.0

–––



Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Total Gate Charge

–––

140

ID = 110A

Qgs

Gate-to-Source Charge

–––

VDS = 50V

Qgd

Gate-to-Drain Charge

–––

VGS = 4.5V

Qsync

Total Gate Charge Sync. (Qg - Qgd)

–––

td(on)

Turn-On Delay Time

–––

VDD = 65V

Rise Time

–––

160

–––

ID = 110A

td(off)

Turn-Off Delay Time

–––

110

–––

RG= 2.7

Fall Time

–––

VGS = 4.5V

Ciss

Input Capacitance

––– 11490 –––

VGS = 0V

Coss

Output Capacitance

–––

680

–––

VDS = 50V

Crss

Reverse Transfer Capacitance

–––

300

–––

ƒ = 1.0MHz

Coss eff.(ER)

Effective Output Capacitance (Energy Related)

–––

760

–––

VGS = 0V, VDS = 0V to 80V

Coss eff.(TR)

Effective Output Capacitance (Time Related)

–––

1170 –––

VGS = 0V, VDS = 0V to 80V

Diode Characteristics

Parameter

Min. Typ. Max. Units

Conditions

Continuous Source Current

–––

190

MOSFET symbol

(Body Diode)

showing the

ISM

Pulsed Source Current

–––

750

integral reverse

(Body Diode)

p-n junction diode.

VSD

Diode Forward Voltage

–––

1.3

TJ = 25°C,IS = 110A,VGS = 0V 

trr

Reverse Recovery Time

–––

TJ = 25°C

VDD = 85V

–––

TJ = 125°C

IF = 110A,

Qrr

Reverse Recovery Charge

–––

TJ = 25°C

di/dt = 100A/µs 

–––

155

–––

TJ = 125°C

IRRM

Reverse Recovery Current

–––

3.3

–––

TJ = 25°C



ton

Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

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