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2SA562 Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SA562 Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon PNP Power Transistor 2SA562 DESCRIPTION · Low Saturation Voltage · Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS · Designed for high-speed switching and Amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -35 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -0.5 A PC Collector Power Dissipation @TC=25℃ 0.5 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ |
Ähnliche Teilenummer - 2SA562 |
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Ähnliche Beschreibung - 2SA562 |
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