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NE85634 Datenblatt(PDF) 4 Page - NEC

Teilenummer NE85634
Bauteilbeschribung  NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
PDF  25 Pages
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Hersteller  NEC [NEC]
Direct Link  http://www.nec.com/
Logo NEC - NEC

NE85634 Datenblatt(HTML) 4 Page - NEC

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NE856 SERIES
TYPICAL PERFORMANCE CURVES (TA = 25 °C)
Collector Current, IC (mA)
Collector Current, IC (mA)
NE85635
INSERTION GAIN vs.
COLLECTOR CURRENT
Collector Current, IC (mA)
INSERTION GAIN vs.
COLLECTOR CURRENT
Collector Current, IC (mA)
Frequency, f (GHz)
Frequency, f (GHz)
NE85635
FORWARD INSERTION GAIN
AND MAXIMUM AVAILABLE GAIN
vs. FREQUENCY
NE85634
FORWARD INSERTION GAIN
AND MAXIMUM AVAILABLE GAIN
vs. FREQUENCY
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
NE85632 AND NE85634
INTERMODULATION DISTORTION
vs. COLLECTOR CURRENT
VCE = 10 V
IC = 20 mA
MAG
|S21E| 2
0.1
0.2
0.3
0.5
0.7
1.0
2.0
25
20
15
10
5
0
MAG
|S21E|
2
VCE = 10 V
IC = 20 mA
0.1
0.2 0.3
0.5
1
2
5
10
25
20
15
10
5
0
-5
VCE = 10 V
NE85632
NE85634
NE85635
NE85633
1
2
3
5
7 10
20 30
50 70 100
10
7
5
3
2
1
IM3
IM2
VCE = 10 V
VO = 100 dB
µV/50 Ω
RG = RL = 50
Ω
IM2 f = 90 + 100 MHz
IM3 f = 2 X 200-190 MHz
20
30
40
50
60
70
-80
-70
-60
-50
-40
-30
VCE = 10 V
f = 1 GHz
NE85633
NE85632
NE85634
1
2
3
5
7
10
20 30
50 70 100
16
14
12
10
8
6
4
VCE = 10 V
f = 500 MHz
f = 1 GHz
f = 2 GHz
1
2
5
10
20
50
100
24
20
16
12
8
4
0



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