BTB08 datasheet(3/11 Pages) STMICROELECTRONICS

3 / 11 page

BTA08, BTB08 and T8 Series

3/11

■ Standard (4 quadrants)

Table 5: Static Characteristics

Table 6: Thermal resistance

Symbol

Test Conditions

Quadrant

BTA08 / BTB08

Unit

IGT (1)

VD = 12 V

RL = 30 Ω

I - II - III

MAX.

100

VGT

ALL

MAX.

1.3

VGD

VD = VDRM RL = 3.3 kΩ Tj = 125°C

ALL

MIN.

0.2

IH (2)

IT = 500 mA

MAX.

IG = 1.2 IGT

I - III - IV

MAX.

100

dV/dt (2)

VD = 67 %VDRM gate open Tj = 125°C

MIN.

200

400

V/µs

(dV/dt)c (2) (dI/dt)c = 5.3 A/ms

Tj = 125°C

MIN.

V/µs

Symbol

Test Conditions

Value

Unit

VT (2)

ITM = 11 A

tp = 380 µs

Tj = 25°C

MAX.

1.55

Vto (2)

Threshold voltage

Tj = 125°C

MAX.

0.85

Rd (2)

Dynamic resistance

Tj = 125°C

MAX.

Ω

IDRM

IRRM

VDRM = VRRM

Tj = 25°C

MAX.

5µA

Tj = 125°C

1mA

Note 1: minimum IGT is guaranted at 5% of IGT max.

Note 2: for both polarities of A2 referenced to A1.

Symbol

Parameter

Value

Unit

Rth(j-c)

Junction to case (AC)

IPAK / D2PAK / DPAK / TO-220AB

1.6

°C/W

TO-220AB Insulated

2.5

Rth(j-a)

Junction to ambient

S = 1 cm²

D2PAK

°C/W

S = 0.5 cm²

DPAK

TO-220AB / TO-220AB Insulated

IPAK

100

S = Copper surface under tab.

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