| Datenblatt-Suchmaschine für elektronische Bauteile |
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2SB901 Datenblatt(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SB901 Datenblatt(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon PNP Power Transistor 2SB901 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; IB= 0 -60 V V(BR)CBO Collector-Base breakdown voltage IC=-1mA; IE= 0 -60 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 -6 V VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A -1.0 V VBE(on) Base-Emitter On Voltage IC=- 2A; VCE=-4V -1.4 V ICBO Collector Cutoff Current VCB= -60V; IE= 0 -100 μ A ICEO Collector Cutoff Current VCE= -60V; IB= 0 -100 μ A IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -10 μ A hFE DC Current Gain IC= -1A ; VCE= -4V 40 200 fT Current-Gain—Bandwidth Product IC=-0.5A ; VCE= -10V 6 MHz |
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