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IRF520N Datenblatt(PDF) 2 Page - Inchange Semiconductor Company Limited

Teilenummer IRF520N
Bauteilbeschribung  isc N-Channel MOSFET Transistor
PDF  2 Pages
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Hersteller  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

IRF520N Datenblatt(HTML) 2 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc website： www.iscsemi.com
isc & iscsemi is registered trademark
2
isc N-Channel MOSFET Transistor
IRF520N
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
V(BR)DSS
Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
100
V
VGS(th)
Gate Threshold Voltage
VDS= VGS; ID= 0.25mA
2
4
V
RDS(on)
Drain-Source On-Resistance
VGS= 10V; ID= 5.7A
0.2
Ω
IGSS
Gate-Body Leakage Current
VGS= ±20V;VDS= 0
±
100
nA
IDSS
Zero Gate Voltage Drain Current
VDS= 100V; VGS=0
25
uA
VSD
Forward On-Voltage
IS= 5.7A; VGS=0
1.3
V
Gfs
Forward Transconductance
VDS≥ 50V；ID= 5.7A
2.7
S
Ciss*
Input capacitance
VGS=0V
VDS=25V
f=1MHz
3400
pF
Coss*
Output capacitance
260
pF
Crss*
Reverse transfer capacitance
210
pF
td(on)*
Turn-on delay time
VDD=30V
VGS=10V
ID=2A
RG=2.5Ω
RL=15Ω
15
ns
Tr*
Rise time
11
ns
td(off)*
Turn-off delay time
52
ns
Tf*
Fall time
13
ns
Qg*
Total Gate Charge
ID=30A
VDS=30V
VGS=10V
94
nC
Qgs*
Gate-Source Charge
16
nC
Qgd*
Gate-Drain Charge
24
nC
*:Pulse width≤300us,duty cycle ≤2%
*:Guaranteed by design,not subject to production



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