2SD74 datasheet(1/2 Pages) ISC

Teilenummer	2SD74

Bauteilbeschribung	isc Silicon NPN Power Transistor

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Hersteller	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc website：www.iscsemi.com

isc & iscsemi is registered trademark

1

isc Silicon NPN Power Transistor

2SD74

DESCRIPTION

·

Collector-Emitter Breakdown Voltage-

: V(BR)CEO= 90V(Min)

·

Good Linearity of hFE

·

Wide Area of Safe Operation

·

100% avalanche tested

·

Minimum Lot-to-Lot variations for robust device

performance and reliable operation

APPLICATIONS

·

Designed for use in general purpose power amplifier and

switching applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

150

V

VCEO

Collector-Emitter Voltage

90

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

5

A

ICM

Collector Current-Peak

8

A

PC

Collector Power Dissipation

@ TC=25℃

60

W

TJ

Junction Temperature

175

℃

Tstg

Storage Temperature Range

-65~175

℃

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