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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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2SD506 Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SD506 Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  INCHANGE Semiconductor isc website：www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Darlingtion Power Transistor 2SD506 DESCRIPTION · High DC current gain- hFE = 750 (Min) @ IC = 6A · Collector-Emitter Sustaining Voltage- VCEO(SUS)= 100V(Min) · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for general purpose amplifier and low frequency switching applications. ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 12 A ICM Collector Current-Peak 20 A IB Base Current 0.2 A PC Collector Power Dissipation@TC=25℃ 150 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ |
Ähnliche Teilenummer - 2SD506 |
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Ähnliche Beschreibung - 2SD506 |
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