2SD867 datasheet(1/2 Pages) ISC

Teilenummer	2SD867

Bauteilbeschribung	isc Silicon NPN Power Transistor

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Hersteller	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc website：www.iscsemi.com

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isc Silicon NPN Power Transistor

2SD867

DESCRIPTION

·Collector-Emitter Sustaining Voltage-

: VCEO(SUS)= 110V(Min).

·Excellent Safe Operating Area

·Low collector saturation voltage

: VCE(sat)= 3.0V(Max)@ IC = 10A

·Minimum Lot-to-Lot variations for robust device performance

and reliable operation.

APPLICATIONS

·High voltage high current power transistors

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

130

V

VCEO

Collector-Emitter Voltage

110

V

VEBO

Emitter-Base Voltage

7

V

IC

Collector Current-Continuous

10

A

ICP

Collector Current-Peak

15

A

IB

Base Current-Continuous

7

A

PC

Collector Power Dissipation@TC=25℃

100

W

TJ

Junction Temperature

175

℃

Tstg

Storage Temperature

-65~175

℃

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2SD867 Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited

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