2SD928 datasheet(1/2 Pages) ISC

Teilenummer	2SD928

Bauteilbeschribung	isc Silicon NPN Power Transistor

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Hersteller	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc website：www.iscsemi.com

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isc Silicon NPN Power Transistor

2SD928

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= 80V(Min)

·Low Collector-Emitter Saturation Voltage-

: VCE(sat)= 1.0V(Max) @IC= 3.0A

·100% avalanche tested

·Minimum Lot-to-Lot variations for robust device

performance and reliable operation

APPLICATIONS

·Designed for use in audio frequency power amplifier

applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

80

V

VCEO

Collector-Emitter Voltage

80

V

VEBO

Emitter-Base Voltage

7

V

IC

Collector Current-Continuous

4

A

ICM

Collector Current-Peak

6

A

IB

Base Current-Continuous

0.5

A

PC

Collector Power Dissipation

@ TC=25℃

30

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

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