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2SD956 Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited

Teilenummer 2SD956
Bauteilbeschribung  isc Silicon NPN Power Transistor
PDF  2 Pages
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Hersteller  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SD956 Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon NPN Power Transistor
2SD956
DESCRIPTION
·High Breakdown Voltage-
: VCBO= 1500V (Min)
·Low Collector Saturation Voltage-
: VCE(sat)= 4.0V(Max.)@ IC= 2A
·Built-in Damper Diode
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for line-operated horizontal deflection output
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1500
V
VCES
Collector-Emitter Voltage
1500
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current- Continuous
2.5
A
ICP
Collector Current- Peak
4.5
A
PC
Collector Power Dissipation
@ TC= 25℃
50
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃


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