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LM4890IBP Datenblatt(PDF) 4 Page - National Semiconductor (TI) |
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LM4890IBP Datenblatt(HTML) 4 Page - National Semiconductor (TI) |
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4 / 31 page ![]() Absolute Maximum Ratings (Note 2) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. Supply Voltage (Note 11) 6.0V Storage Temperature −65˚C to +150˚C Input Voltage −0.3V to V DD +0.3V Power Dissipation (Note 3) Internally Limited ESD Susceptibility (Note 4) 2000V Junction Temperature 150˚C Thermal Resistance θ JC (SOP) 35˚C/W θ JA (SOP) 150˚C/W θ JA (8 Bump micro SMD, Note 12) 220˚C/W θ JA (9 Bump micro SMD, Note 12) 180˚C/W θ JC (MSOP) 56˚C/W θ JA (MSOP) 190˚C/W θ JA (LLP) 220˚C/W Soldering Information See AN-1112 "microSMD Wafers Level Chip Scale Package." See AN-1187 "Leadless Leadframe Package (LLP)." Operating Ratings Temperature Range T MIN ≤ T A ≤ T MAX −40˚C ≤ T A ≤ 85˚C Supply Voltage 2.2V ≤ V DD ≤ 5.5V Electrical Characteristics V DD =5V (Notes 1, 2, 8) The following specifications apply for the circuit shown in Figure 1 unless otherwise specified. Limits apply for T A = 25˚C. Symbol Parameter Conditions LM4890 Units (Limits) Typical Limit (Note 6) (Notes 7, 9) I DD Quiescent Power Supply Current V IN = 0V, Io = 0A, No Load 4 8 mA (max) V IN = 0V, Io = 0A, 8 Ω Load 5 10 mA (max) I SD Shutdown Current V SHUTDOWN = 0V 0.1 2.0 µA (max) V SDIH Shutdown Voltage Input High 1.2 V (min) V SDIL Shutdown Voltage Input Low 0.4 V (max) V OS Output Ofsett Voltage 7 50 mV (max) R OUT-GND Resistor Output to GND (Note 10) 8.5 9.7 k Ω (max) 7.0 k Ω (min) P o Output Power ( 8 Ω ) THD = 2% (max);f=1kHz 1.0 0.8 W T WU Wake-up time 170 220 ms (max) T SD Thermal Shutdown Temperature 170 150 ˚C (min) 190 ˚C (max) THD+N Total Harmonic Distortion+Noise P o = 0.4 Wrms; f = 1kHz 0.1 % PSRR Power Supply Rejection Ratio (Note 14) V ripple = 200mV sine p-p Input Terminated with 10 ohms to ground 62 (f = 217Hz) 66 (f = 1kHz) 55 dB (min) T SDT Shut Down Time 8 Ω load 1.0 ms (max) Electrical Characteristics V DD =3V (Notes 1, 2, 8) The following specifications apply for the circuit shown in Figure 1 unless otherwise specified. Limits apply for T A = 25˚C. Symbol Parameter Conditions LM4890 Units (Limits) Typical Limit (Note 6) (Notes 7, 9) I DD Quiescent Power Supply Current V IN = 0V, Io = 0A, No Load 3.5 7 mA (max) V IN = 0V, Io = 0A, 8 Ω Load 4.5 9 mA (max) I SD Shutdown Current V SHUTDOWN = 0V 0.1 2.0 µA (max) V SDIH Shutdown Voltage Input High 1.2 V(min) V SDIL Shutdown Voltage Input Low 0.4 V(max) V OS Output Offset Voltage 7 50 mV (max) R OUT-GND Resistor Output to Gnd (Note 10) 8.5 9.7 k Ω (max) 7.0 k Ω (min) T WU Wake-up time 120 180 ms (max) www.national.com 4 |
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