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NJVMJD50T4G Datenblatt(PDF) 2 Page - ON Semiconductor

Teilenummer NJVMJD50T4G
Bauteilbeschribung  High Voltage Power Transistors
PDF  4 Pages
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Hersteller  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
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NJVMJD50T4G Datenblatt(HTML) 2 Page - ON Semiconductor

  NJVMJD50T4G Datasheet HTML 1Page - ON Semiconductor NJVMJD50T4G Datasheet HTML 2Page - ON Semiconductor NJVMJD50T4G Datasheet HTML 3Page - ON Semiconductor NJVMJD50T4G Datasheet HTML 4Page - ON Semiconductor  
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MJE2955T (PNP), MJE3055T (NPN)
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 2)
(IC = 200 mAdc, IB = 0)
VCEO(sus)
60
−
Vdc
Collector Cutoff Current
(VCE = 30 Vdc, IB = 0)
ICEO
−
700
mAdc
Collector Cutoff Current
(VCE = 70 Vdc, VEB(off) = 1.5 Vdc)
(VCE = 70 Vdc, VEB(off) = 1.5 Vdc, TC = 150°C)
ICEX
−
−
1.0
5.0
mAdc
Collector Cutoff Current
(VCB = 70 Vdc, IE = 0)
(VCB = 70 Vdc, IE = 0, TC = 150°C)
ICBO
−
−
1.0
10
mAdc
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
IEBO
−
5.0
mAdc
ON CHARACTERISTICS
DC Current Gain (Note 2)
(IC = 4.0 Adc, VCE = 4 0 Vdc)
(IC = 10 Adc, VCE = 4.0 Vdc)
hFE
20
5.0
100
−
−
Collector−Emitter Saturation Voltage (Note 2)
(IC = 4.0 Adc, IB = 0.4 Adc)
(IC = 10 Adc, IB = 3.3 Adc)
VCE(sat)
−
−
1.1
8.0
Vdc
Base−Emitter On Voltage (Note 2)
(IC = 4.0 Adc, VCE = 4.0 Vdc)
VBE(on)
−
1.8
Vdc
DYNAMIC CHARACTERISTICS
Current−Gain−Bandwidth Product
(IC = 500 mAdc, VCE = 10 Vdc, f = 500 kHz)
fT
2.0
−
MHz
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width
≤ 300 ms, Duty Cycle ≤ 20%.



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