4AM11 datasheet(1/10 Pages) HITACHI

Teilenummer	4AM11

Bauteilbeschribung	Silicon N-Channel/P-Channel Power MOS FET Array

PDF	10 Pages

Scroll/Zoom	100%

Hersteller	HITACHI [Hitachi Semiconductor]

Direct Link	http://www.renesas.com/eng

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1 / 10 page

4AM11

Silicon N-Channel/P-Channel Power MOS FET Array

Application

High speed power switching

Features

•

Low on-resistance

N-channel: RDS(on) ≤ 0.17 Ω, VGS = 10 V, ID = 2.5 A

P-channel: RDS(on) ≤ 0.2 Ω, VGS = –10 V, ID = –2.5 A

•

Capable of 4 V gate drive

•

Low drive current

•

High speed switching

•

High density mounting

•

Suitable for H-bridged motor driver

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