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LM709 Datenblatt(PDF) 2 Page - National Semiconductor (TI) |
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LM709 Datenblatt(HTML) 2 Page - National Semiconductor (TI) |
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2 / 8 page ![]() Absolute Maximum Ratings (Note 3) If MilitaryAerospace specified devices are required please contact the National Semiconductor Sales OfficeDistributors for availability and specifications Supply Voltage LM709LM709ALM709C g 18V Power Dissipation (Note 1) LM709LM709A 300 mW LM709C 250 mW Differential Input Voltage LM709LM709ALM709C g 5V Input Voltage LM709LM709ALM709C g 10V Output Short-Circuit Duration (TA ea25 C) LM709LM709ALM709C 5 seconds Storage Temperature Range LM709LM709ALM709C b 65 Cto a150 C Lead Temperature (Soldering 10 sec) LM709LM709ALM709C 300 C Operating Ratings (Note 3) Junction Temperature Range (Note 1) LM709LM709A b 55 Cto a150 C LM709C 0 Cto a100 C Thermal Resistance (iJA) H Package 150 CW (iJC)45 CW 8-Pin N Package 134 CW 14-Pin N Package 109 CW Electrical Characteristics (Note 2) Parameter Conditions LM709A LM709 LM709C Units Min Typ Max Min Typ Max Min Typ Max Input Offset Voltage TA e 25 C RS s 10 kX 06 20 10 50 20 75 mV Input Bias Current TA e 25 C 100 200 200 500 300 1500 nA Input Offset Current TA e 25 C 10 50 50 200 100 500 nA Input Resistance TA e 25 C 350 700 150 400 50 250 kX Output Resistance TA e 25 C 150 150 150 X Supply Current TA e 25 C VS e g15V 25 36 26 55 26 66 mA Transient Response VIN e 20 mV CL s 100 pF Risetime TA e 25 C 15 03 10 03 10 m s Overshoot 30 10 30 10 30 % Slew Rate TA e 25 C 025 025 025 V ms Input Offset Voltage RS s 10 kX 30 60 10 mV Average Temperature RS e 50X TA e 25 CtoTMAX 18 10 30 60 Coefficient of TA e 25 CtoTMIN 18 10 60 12 m V C Input Offset Voltage RS e 10 kX TA e 25 CtoTMAX 20 15 TA e 25 CtoTMIN 48 25 Large Signal VS e g15V RL t 2kX 25 70 25 45 70 15 45 VmV Voltage Gain VOUT e g10V Output Voltage Swing VS e g15V RL e 10 kX g 12 g 14 g 12 g 14 g 12 g 14 V VS e g15V RL e 2kX g 10 g 13 g 10 g 13 g 10 g 13 Input Voltage Range VS e g15V g 8 g 8 g 10 g 8 g 10 V Common-Mode RS s 10 kX 80 110 70 90 65 90 dB Rejection Ratio Supply Voltage RS s 10 kX 40 100 25 150 25 200 m VV Rejection Ratio Input Offset Current TA e TMAX 35 50 20 200 75 400 nA TA e TMIN 40 250 100 500 125 750 Input Bias Current TA e TMIN 03 06 05 15 036 20 m A Input Resistance TA e TMIN 85 170 40 100 50 250 kX Note 1 For operating at elevated temperatures the device must be derated based on a 150 C maximum junction temperature for LM709LM709A and 100 C maximum for L709C For operating at elevated temperatures the device must be derated based on thermal resistance iJA TJ(MAX) and TA Note 2 These specifications apply for b55 C s TA s a125 C for the LM709LM709A and 0 C s TA s a70 C for the LM709C with the following conditions g 9V s VS s g15V C1 e 5000 pF R1 e 15 kX C2 e 200 pF and R2 e 51X Note 3 Absolute Maximum Ratings indicate limits which if exceeded may result in damage Operating Ratings are conditions where the device is expected to be functional but not necessarily within the guaranteed performance limits For guaranteed specifications and test conditions see the Electrical Characteristics 2 |
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