2

ELECTRICAL SPECIFICATIONS

Table 1. Absolute Minimum and Maximum Ratings

Parameter

Specifications

Comments

Description

Min.

Max.

Unit

Drain Supply Voltage

Vd1

5.5

V

Vd2

Gate Voltage

Vg1

-2

0

V

Vg2

Totel Gate Current

Ig1

-3

mA

Ig, total = Ig1 + Ig2 Ig, total occurs at

highest RF Pout condition.

Ig2

RF Input Power (Pin)

RFIN

20

dBm

CW

Powe Dissipation (Pd)

4

W

Pd = Vd1 x Id1 + Vd2 x Id2 + Pin – Pout

Channel Temperature

150

°C

Storage Temperature

-65

150

°C

Table 2. Recommended Operating Range

Parameter

Specifications

Comments

Description

Pin

Min.

Typical

Max.

Unit

Drain Supply Voltage

Vd1

V

Vd2

4.4

Gate Supply Voltage

Vg1

-0.83

-0.63

-0.43

V

Vg2

Quiescent Drain Supply

Current (Idq)

Vd1

mA

Idq = Id1 + Id2

Vd2

560

RF Output Power (Pout)

RFOUT

28

30

dBm

CW

Frequency Range

40.5

43.5

GHz

Thermal Resistance,

13

°C/W

Channel to board

Case Temperature

-40

+85

°C

ESD

Human Body Model

250

V

Machine Model

50

V

Notes:

1. Not recommend to operate below that this voltage level; otherwise, the amplifier may enter instability.

2. Not recommend to operate above that this current level; otherwise, the amplifier may enter instability.