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10ETFS Datenblatt(PDF) 3 Page - Vishay Siliconix

Teilenummer 10ETFS
Bauteilbeschribung  Input rectifications where severe restrictions on conducted EMI should be met
PDF  7 Pages
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Hersteller  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

10ETFS Datenblatt(HTML) 3 Page - Vishay Siliconix

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Document Number: 93134
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
Revision: 22-Oct-08
3
10ETF..S Soft Recovery Series
Fast Soft Recovery
Rectifier Diode, 10 A
Vishay High Power Products
Fig. 1 - Current Rating Characteristics
Fig. 2 - Current Rating Characteristics
Fig. 3 - Forward Power Loss Characteristics
Fig. 4 - Forward Power Loss Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
0
6
Average Forward Current (A)
4
2
8
10
12
120
125
130
135
140
145
150
60°
30°
90°
180°
10ETF..S Series
R
thJC (DC) = 1.5 °C/W
120°
Conduction angle
Ø
010
Average Forward Current (A)
6
212
16
4
8
14
120
125
130
135
140
145
150
60°
30°
180°
DC
90°
120°
10ETF..S Series
R
thJC (DC) = 1.5 °C/W
Ø
Conduction period
4
0
16
0
Average Forward Current (A)
8
10
10
10ETF..S Series
T
J = 150 °C
12
8
46
180°
RMS limit
Conduction angle
2
2
6
14
60°
30°
90°
120°
Ø
4
0
20
0
Average Forward Current (A)
12
12
16
10ETF..S Series
T
J = 150 °C
16
8
Ø
Conduction period
DC
4
8
60°
30°
180°
90°
120°
RMS limit
160
80
40
1
10
100
Number of Equal Amplitude Half Cycle
Current Pulses (N)
140
60
100
120
10ETF..S Series
Initial T
J = 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
At any rated load condition and with
rated V
RRM applied following surge.
180
80
40
0.01
0.1
1
Pulse Train Duration (s)
140
60
100
120
10ETF..S Series
Initial T
J = 150 °C
No voltage reapplied
Rated V
RRM reapplied
Maximum non-repetitive surge current
versus pulse train duration.
160



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