MMBT3906T datasheet(2/4 Pages) BILIN

2 / 4 page

Production specification

PNP General Purpose Transistor

MMBT3906T

H015

www.gmicroelec.com

Rev.A

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V(BR)CBO

Collector-base breakown voltage

IC=-10μA,IE=0

-40

V(BR)CEO

Collector- emitter breakown voltage IC=-1.0mA,IB=0

-40

V(BR)BEO

Emitter-base breakown voltage

IE=-10μA,IC=0

-5

ICBO

Collector cut-off current

IE=0,VCB=-30V

-50

IEBO

Emitter cut-off current

IC=0,VEB=-5V

-50

ICEX

collector cut-off current

VCE=-30V,VEB(OFF)=-3.0V

-50

IBL

Base cut-off current

VCE=-30V, VEB(OFF)=-3.0V

-50

hFE

DC current gain

VCE=-1V,IC=-0.1mA

VCE=-1V,IC=-1mA

VCE=-1V,IC=-10mA

VCE=-1V,IC=-50mA

VCE=-1V,IC=-100mA

100

300

IC=-10mA,IB=-1mA

-250

VCE（sat）

collector-emitter saturation voltage

IC=-50mA,IB=-5mA

-400

IC=-10mA; IB=-1mA

-650

-850

VBE（sat）

base-emitter saturation voltage

IC=-50mA; IB=-5mA

-950

Cobo

Output capacitance

IE=0,VCB=-5V,f=1MHz

4.5

Cibo

Input capacitance

IC=0,VBE=-0.5V,f =1MHz

transition frequency

IC=-10mA,VCE =-20V,f=100MHz

250

MHz

delay time

rise time

IC=-10mA,IB1=-1mA,VBE(off)=-0.5V

VCC=-3.0V

storage time

225

fall time

VCC=-3.0V, IC=-10mA

IB1=IB2=-1mA

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