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Document Number: 72706

S09-1454-Rev. E, 03-Aug-09

Vishay Siliconix

SiP41104

Notes:

a. Device mounted with all leads soldered or welded to PC board.

a. Derate 7.7 mW/°C.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

ABSOLUTE MAXIMUM RATINGS (all voltages referenced to GND = 0 V)

Parameter

Limit

Unit

7

V

LX, BOOT

55

BOOT to LX

7

Storage Temperature

- 40 to 150

°C

Operating Junction Temperature

125

SO-8

770

mW

Thermal Impedance (

Θ

a

130

°C/W

RECOMMENDED OPERATING RANGE (all voltages referenced to GND = 0 V)

Parameter

Limit

Unit

4.5 to 5.5

V

4.5 to 50

100 nF to 1 µF

Operating Temperature Range

- 40 to 85

°C

Parameter

Symbol

Test Conditions Unless Specified

Limits

Unit

Power Supplies

Supply Voltage

4.5

5.5

V

Quiescent Current

2.5

3.5

mA

Tristate Current

PWM = open

500

1000

µA

Reference Voltage

Break-Before-Make

1V

PWM Input

Input High

4.0

V

Input Low

0.5

Bias Current

± 700

± 1400

µA

Tristate Threshold

High

3.2

V

Low

1.9

Rising or falling

425

ns

High-Side Undervoltage Lockout

Threshold

Rising or falling

2.5

3.35

3.75

V

Bootstrap Diode

Forward Voltage

0.70

0.76

0.82

V