STPS2H100ZF datasheet(3/8 Pages) STMICROELECTRONICS

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STPS2H100ZF

Characteristics

DocID029645 Rev 1

3/8

1.1

Characteristics (curves)

Figure 1: Average forward power dissipation

versus average forward current

Figure 2: Average forward current versus ambient

temperature (δ = 0.5)

Figure 3: Normalized avalanche power derating

versus pulse duration (Tj = 125 °C)

Figure 4: Relative variation of thermal impedance

junction to lead versus pulse duration

Figure 5: Reverse leakage current versus reverse

voltage applied (typical values)

Figure 6: Junction capacitance versus reverse

voltage applied (typical values)

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

δ = 0.05

δ = 0.1

δ = 0.2

δ = 0.5

δ = 1

δ = tp/T

IF(AV)(A)

PF(AV)(W)

100

125

150

175

th(j-a) = Rth(j-l)

δ= tp/T

IF(AV)(A)

Tamb(°C)

(tp)

(10 µs)

ARM

0.001

0.01

0.1

100

1000

t (µs)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

Single pulse

Zth(j-l)/Rth(j-l)

tp(s)

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

100

j = 150 °C

j = 125 °C

j = 25 °C

j = 100 °C

j = 50 °C

j = 75 °C

VR(V)

IR(µA)

100

F = 1 MHz

OSC = 30 mVRMS

j = 25 °C

VR(V)

C(pF)

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