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STPS3L60UY Datenblatt(PDF) 2 Page - STMicroelectronics

Teilenummer STPS3L60UY
Bauteilbeschribung  Automotive power Schottky rectifier
PDF  7 Pages
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Hersteller  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STPS3L60UY Datenblatt(HTML) 2 Page - STMicroelectronics

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Characteristics
STPS3L60U-Y
2/7
DocID024414 Rev 1
1
Characteristics
To evaluate the conduction losses use the following equation:
P = 0.44 x IF(AV) + 0.05 x IF
2
(RMS)
Table 2. Absolute ratings(1)
1. limiting values, per diode
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
60
V
IF(RMS) RMS forward current
10
A
IF(AV)
Average forward current
TL = 105 °C = 0.5
3A
IFSM
Surge non repetitive forward current
tp = 10 ms Sinusoidal
100
A
PARM
Repetitive peak avalanche power
tp = 1 µs Tj = 25 °C
2000
W
Tstg
Storage temperature range
-65 to + 150
°C
Tj
Operating junction temperature(2) range
2.
condition to avoid thermal runaway for a diode on its own heatsink
-40 to + 150
°C
dV/dt
Critical rate of rise reverse voltage
10000
V/µs
Table 3. Thermal resistance
Symbol
Parameter
Value
Unit
Rth (j-l)
Junction to leads
20
C/W
Table 4. Static electrical characteristics
Symbol
Parameter
Tests Conditions
Min.
Typ.
Max.
Unit
IR
(1)
1. Pulse test: tp = 380 µs,  < 2%
Reverse leakage current
Tj = 25 °C
VR = VRRM
-
-
150
µA
Tj = 100 °C
-
4
15
mA
Tj = 125 °C
-
14
30
VF
(1)
Forward voltage drop
Tj = 25 °C
IF = 3 A
-
-
0.62
V
Tj = 100 °C
-
0.53
0.61
Tj = 125 °C
-
0.51
0.59
Tj = 25 °C
IF = 6 A
-
-
0.79
Tj = 100 °C
-
0.62
0.71
Tj = 125 °C
-
0.6
0.69
dPtot
dTj
---------------
1
Rth j
a
–

--------------------------



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