| Datenblatt-Suchmaschine für elektronische Bauteile |
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BTW69-1200N Datenblatt(PDF) 3 Page - STMicroelectronics |
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BTW69-1200N Datenblatt(HTML) 3 Page - STMicroelectronics |
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3 / 9 page ![]() DocID024685 Rev 1 3/9 BTW69-1200N Characteristics 9 Table 4. Thermal resistance Symbol Parameter Value Unit Rth(j-c) Junction to case (DC, typ.) 0.45 °C/W Rth(j-a) Junction to ambient (DC) 50 °C/W Figure 1. Maximum average power dissipation versus average on-state current Figure 2. Correlation between maximum average power dissipation and maximum allowable temperatures P(W) 0 5 10 15 20 25 30 35 40 45 50 55 0 5 10 15 20 25 30 35 40 DC I (A) T(AV) 360° a a = 180° a = 120° a = 90° a = 60° a = 30° 0 10 20 30 40 50 0 25 50 75 100 125 P (AV)(W) 100.2 102.7 105.2 107.7 110.2 112.7 115.2 117.7 120.2 122.7 T c(°C) RTH (assembly) 0 °C/W 1 °C/W 2 °C/W 3 °C/W Ta(°C) a = 180° Figure 3. Average and DC on-state current versus case temperature Figure 4. Average and DC on-state current versus ambient temperature I (A) T(AV) 0 5 10 15 20 25 30 35 40 45 50 55 0 25 50 75 100 125 DC a = 180° a = 120° a = 90° a = 60° a = 30° T (°C) case 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 25 50 75 100 125 DC I (A) T(AV) a = 180° T (°C) a |
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