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BTW69-1200N Datenblatt(PDF) 3 Page - STMicroelectronics

Teilenummer BTW69-1200N
Bauteilbeschribung  50 A – 1200 V non insulated SCR thyristor
PDF  9 Pages
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Hersteller  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

BTW69-1200N Datenblatt(HTML) 3 Page - STMicroelectronics

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BTW69-1200N
Characteristics
9
Table 4. Thermal resistance
Symbol
Parameter
Value
Unit
Rth(j-c)
Junction to case (DC, typ.)
0.45
°C/W
Rth(j-a)
Junction to ambient (DC)
50
°C/W
Figure 1. Maximum average power dissipation
versus average on-state current
Figure 2. Correlation between maximum
average power dissipation and maximum
allowable temperatures
P(W)
0
5
10
15
20
25
30
35
40
45
50
55
0
5
10
15
20
25
30
35
40
DC
I
(A)
T(AV)
360°
a
a = 180°
a = 120°
a = 90°
a = 60°
a = 30°
0
10
20
30
40
50
0
25
50
75
100
125
P
(AV)(W)
100.2
102.7
105.2
107.7
110.2
112.7
115.2
117.7
120.2
122.7
T
c(°C)
RTH
(assembly)
0 °C/W
1 °C/W
2 °C/W
3 °C/W
Ta(°C)
a = 180°
Figure 3. Average and DC on-state current
versus case temperature
Figure 4. Average and DC on-state current
versus ambient temperature
I
(A)
T(AV)
0
5
10
15
20
25
30
35
40
45
50
55
0
25
50
75
100
125
DC
a = 180°
a = 120°
a = 90°
a = 60°
a = 30°
T
(°C)
case
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
25
50
75
100
125
DC
I
(A)
T(AV)
a = 180°
T (°C)
a



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