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STP6N52K3 Datenblatt(PDF) 1 Page - STMicroelectronics

Teilenummer STP6N52K3
Bauteilbeschribung  Extremely high dv/dt capability
PDF  22 Pages
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Hersteller  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP6N52K3 Datenblatt(HTML) 1 Page - STMicroelectronics

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March 2011
Doc ID 14994 Rev 2
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STB6N52K3, STD6N52K3
STF6N52K3, STP6N52K3
N-channel 525 V, 1
Ω, 5 A, D²PAK, DPAK, TO-220FP, TO-220
SuperMESH3™ Power MOSFET
Features
■ 100% avalanche tested
■ Extremely high dv/dt capability
■ Gate charge minimized
■ Very low intrinsic capacitance
■ Improved diode reverse recovery
characteristics
■ Zener-protected
Application
Switching applications
Description
These devices are made using the
SuperMESH3™ Power MOSFET technology that
is obtained via improvements applied to
STMicroelectronics’ SuperMESH™ technology
combined with a new optimized vertical structure.
The resulting product has an extremely low on
resistance, superior dynamic performance and
high avalanche capability, making it especially
suitable for the most demanding applications.
Figure 1.
Internal schematic diagram
Order codes
VDSS
RDS(on)
max
ID
Pw
STB6N52K3
525 V
< 1.2
Ω
5 A
70 W
STD6N52K3
5 A(1)
1.
Limited by package
25 W
STF6N52K3
5 A
70 W
STP6N52K3
1
3
DPAK
TO-220FP
1
2
3
1
2
3
TO-220
1
3
D²PAK
D(2)
G(1)
S(3)
AM01476v1
Table 1.
Device summary
Order codes
Marking
Package
Packaging
STB6N52K3
6N52K3
D²PAK
Tape and reel
STD6N52K3
DPAK
STF6N52K3
TO-220FP
Tube
STP6N52K3
TO-220
www.st.com


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