STP18N65M2 datasheet(5/15 Pages) STMICROELECTRONICS

Teilenummer	STP18N65M2

Bauteilbeschribung	Extremely low gate charge

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Hersteller	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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5 / 15 page

DocID026870 Rev 2

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STI18N65M2, STP18N65M2

Electrical characteristics

Table 8. Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain current

ISDM

(1)

Pulse width limited by safe operating area.

Source-drain current (pulsed)

VSD

(2)

Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Forward on voltage

ISD = 12 A, VGS = 0 V

1.6

trr

Reverse recovery time

ISD = 12 A, di/dt = 100 A/µs

VDD = 60 V (see Figure 16)

-331

Qrr

Reverse recovery charge

3.4

µC

IRRM

Reverse recovery current

20.5

trr

Reverse recovery time

ISD = 12 A, di/dt = 100 A/µs

VDD = 60 V, Tj = 150 °C

(see Figure 16)

-462

Qrr

Reverse recovery charge

4.6

µC

IRRM

Reverse recovery current

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