| Datenblatt-Suchmaschine für elektronische Bauteile |
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STGP30H65F Datenblatt(PDF) 3 Page - STMicroelectronics |
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STGP30H65F Datenblatt(HTML) 3 Page - STMicroelectronics |
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3 / 13 page ![]() DocID025631 Rev 1 3/13 STGP30H65F Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V CES Collector-emitter voltage (V GE = 0) 650 V I C Continuous collector current at T C = 25 °C 60 A I C Continuous collector current at T C = 100 °C 30 A I CP (1) 1. Pulse width limited by maximum junction temperature. Pulsed collector current 120 A V GE Gate-emitter voltage ±20 V P TOT Total dissipation at T C = 25 °C 260 W T STG Storage temperature range - 55 to 150 °C T J Operating junction temperature - 55 to 175 Table 3. Thermal data Symbol Parameter Value Unit R thJC Thermal resistance junction-case 0.58 °C/W R thJA Thermal resistance junction-ambient 50 °C/W |
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