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110N10F7 Datenblatt(PDF) 5 Page - STMicroelectronics |
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110N10F7 Datenblatt(HTML) 5 Page - STMicroelectronics |
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5 / 15 page ![]() DocID024004 Rev 4 5/15 STL110N10F7 Electrical characteristics 15 Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current - 21 A ISDM (1) 1. Pulse width limited by safe operating area Source-drain current (pulsed) - 84 A VSD (2) 2. Pulsed: pulse duration=300 µs, duty cycle 1.5% Forward on voltage VGS=0, ISD = 21 A - 1.2 V trr Reverse recovery time ISD = 21 A, di/dt = 100 A/µs, VDD=80 V, Tj=150 °C -77 ns Qrr Reverse recovery charge - 150 nC IRRM Reverse recovery current - 4.3 A |
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