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STP170N8F7 Datenblatt(PDF) 3 Page - STMicroelectronics

Teilenummer STP170N8F7
Bauteilbeschribung  High avalanche ruggedness
PDF  12 Pages
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Hersteller  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP170N8F7 Datenblatt(HTML) 3 Page - STMicroelectronics

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DocID024550 Rev 3
3/12
STP170N8F7
Electrical ratings
1
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage
80
V
VGS
Gate-source voltage
± 20
V
ID
(1)
1.
Limited by package and rated according to Rthj-c.
Drain current (continuous)
120
A
ID
(1)
Drain current (continuous) at TC = 100 °C
120
A
IDM
Drain current (pulsed)
480
A
PTOT
(1)
Total dissipation at TC = 25 °C
250
W
TJ
Operating junction temperature
-55 to 175
°C
Tstg
Storage temperature
°C
Table 3. Thermal resistance
Symbol
Parameter
Value
Unit
Rthj-case
Thermal resistance junction-case
0.6
°C/W
Rthj-amb
Thermal resistance junction-ambient max.
62.5
°C/W
Table 4. Avalanche data
Symbol
Parameter
Value
Unit
IAV
Not-repetitive avalanche current,
(pulse width limited by Tjmax)
35
A
EAS
Single pulse avalanche energy
(starting TJ = 25 °C, ID = IAV, VDD = 50 V)
615
mJ



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