TPDV640RG datasheet(3/8 Pages) STMICROELECTRONICS

Teilenummer	TPDV640RG

Bauteilbeschribung	40 A high voltage Triacs

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Hersteller	STMICROELECTRONICS [STMicroelectronics]

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TPDVxx40

Characteristics

Table 4. Gate characteristics (maximum values)

Symbol

Parameter

Value

Unit

PG(AV)

Average gate power dissipation

PGM

Peak gate power dissipation

tp = 20 µs

IGM

Peak gate current

tp = 20 µs

VGM

Peak positive gate voltage

tp = 20 µs

Table 5. Thermal resistance

Symbol

Parameter

Value

Unit

Rth(j-a)

Junction to ambient

°C/W

Rth(j-c) DC

Junction to case for DC

1.2

°C/W

Rth(j-c) AC

Junction to case for 360 °conduction angle (F = 50 Hz)

0.9

°C/W

Figure 1. Max. rms power dissipation versus

on-state rms current (F = 50 Hz)

(curves limited by (dI/dt)c)

Figure 2. Max. rms power dissipation and max.

allowable temperatures (Tamb and Tcase) for

various Rth

Figure 3. On-state rms current versus case

temperature

Figure 4. Relative variation of thermal

impedance versus pulse duration

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