ST7DALIF2 datasheet(23/171 Pages) STMICROELECTRONICS

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ST7DALIF2

Data EEPROM

23/171

Data EEPROM

7.1

Introduction

The Electrically Erasable Programmable Read Only Memory can be used as a non volatile

back-up for storing data. Using the EEPROM requires a basic access protocol described in

this chapter.

7.2

Main features

■ Up to 32 Bytes programmed in the same cycle

■ EEPROM mono-voltage (charge pump)

■ Chained erase and programming cycles

■ Internal control of the global programming cycle duration

■ Wait mode management

■ Readout protection

Figure 5.

EEPROM block diagram

7.3

Memory access

The Data EEPROM memory read/write access modes are controlled by the E2LAT bit of the

EEPROM Control/Status register (EECSR). The flowchart in Figure 6 describes these

different memory access modes.

Read operation (E2LAT=0)

The EEPROM can be read as a normal ROM location when the E2LAT bit of the EECSR

EECSR

HIGH VOLTAGE

PUMP

E2LAT

E2PGM

EEPROM

MEMORY MATRIX

(1 ROW = 32 x 8 BITS)

ADDRESS

DECODER

DATA

MULTIPLEXER

32 x 8 BITS

DATA LATCHES

ROW

DECODER

DATA BUS

128

ADDRESS BUS

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