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STM32F070CB Datenblatt(PDF) 51 Page - STMicroelectronics |
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STM32F070CB Datenblatt(HTML) 51 Page - STMicroelectronics |
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51 / 83 page ![]() DocID027114 Rev 3 51/83 STM32F070CB/RB/C6/F6 Electrical characteristics 69 6.3.9 PLL characteristics The parameters given in Table 37 are derived from tests performed under ambient temperature and supply voltage conditions summarized in Table 20: General operating conditions. 6.3.10 Memory characteristics Flash memory The characteristics are given at TA = -40 to 85 °C unless otherwise specified. tsu(LSI)(2) LSI oscillator startup time - - 85 µs IDDA(LSI)(2) LSI oscillator power consumption - 0.75 - µA 1. VDDA = 3.3 V, TA = -40 to 85 °C unless otherwise specified. 2. Guaranteed by design, not tested in production. Table 36. LSI oscillator characteristics(1) Symbol Parameter Min Typ Max Unit Table 37. PLL characteristics Symbol Parameter Value Unit Min Typ Max fPLL_IN PLL input clock(1) 1. Take care to use the appropriate multiplier factors to obtain PLL input clock values compatible with the range defined by fPLL_OUT. 1(2) 8.0 24(2) MHz PLL input clock duty cycle 40(2) -60(2) % fPLL_OUT PLL multiplier output clock 16(2) -48 MHz tLOCK PLL lock time - - 200(2) 2. Guaranteed by design, not tested in production. µs JitterPLL Cycle-to-cycle jitter - - 300(2) ps Table 38. Flash memory characteristics Symbol Parameter Conditions Min Typ Max(1) 1. Guaranteed by design, not tested in production. Unit tprog 16-bit programming time TA = -40 to +85 °C - 53.5 - µs tERASE Page erase time (2) 2. Page size is 1KB for STM32F070x6 devices and 2KB for STM32F070xB devices. TA = -40 to +85 °C - 30 - ms tME Mass erase time TA = -40 to +85 °C - 30 - ms IDD Supply current Write mode - - 10 mA Erase mode - - 12 mA Vprog Programming voltage - 2.4 - 3.6 V |
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