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STM32L432KB Datenblatt(PDF) 63 Page - STMicroelectronics |
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STM32L432KB Datenblatt(HTML) 63 Page - STMicroelectronics |
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63 / 149 page ![]() DocID028798 Rev 2 63/149 STM32L432KB STM3L432KC Electrical characteristics 142 6.3.2 Operating conditions at power-up / power-down The parameters given in Table 21 are derived from tests performed under the ambient temperature condition summarized in Table 20. 6.3.3 Embedded reset and power control block characteristics The parameters given in Table 22 are derived from tests performed under the ambient temperature conditions summarized in Table 20: General operating conditions. 5. In low-power dissipation state, TA can be extended to this range as long as TJ does not exceed TJmax (see Section 7.2: Thermal characteristics). Table 21. Operating conditions at power-up / power-down Symbol Parameter Conditions Min Max Unit tVDD VDD rise time rate - 0 ∞ µs/V VDD fall time rate 10 ∞ tVDDA VDDA rise time rate - 0 ∞ VDDA fall time rate 10 ∞ tVDDUSB VDDUSB rise time rate - 0 ∞ VDDUSB fall time rate 10 ∞ Table 22. Embedded reset and power control block characteristics Symbol Parameter Conditions(1) Min Typ Max Unit tRSTTEMPO(2) Reset temporization after BOR0 is detected VDD rising - 250 400 μs VBOR0(2) Brown-out reset threshold 0 Rising edge 1.62 1.66 1.7 V Falling edge 1.6 1.64 1.69 VBOR1 Brown-out reset threshold 1 Rising edge 2.06 2.1 2.14 V Falling edge 1.96 2 2.04 VBOR2 Brown-out reset threshold 2 Rising edge 2.26 2.31 2.35 V Falling edge 2.16 2.20 2.24 VBOR3 Brown-out reset threshold 3 Rising edge 2.56 2.61 2.66 V Falling edge 2.47 2.52 2.57 VBOR4 Brown-out reset threshold 4 Rising edge 2.85 2.90 2.95 V Falling edge 2.76 2.81 2.86 VPVD0 Programmable voltage detector threshold 0 Rising edge 2.1 2.15 2.19 V Falling edge 2 2.05 2.1 VPVD1 PVD threshold 1 Rising edge 2.26 2.31 2.36 V Falling edge 2.15 2.20 2.25 |
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