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STM32L432KB Datenblatt(PDF) 63 Page - STMicroelectronics

Teilenummer STM32L432KB
Bauteilbeschribung  Batch acquisition mode
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Hersteller  STMICROELECTRONICS [STMicroelectronics]
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STM32L432KB Datenblatt(HTML) 63 Page - STMicroelectronics

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STM32L432KB STM3L432KC
Electrical characteristics
142
6.3.2
Operating conditions at power-up / power-down
The parameters given in Table 21 are derived from tests performed under the ambient
temperature condition summarized in Table 20.
6.3.3
Embedded reset and power control block characteristics
The parameters given in Table 22 are derived from tests performed under the ambient
temperature conditions summarized in Table 20: General operating conditions.
5. In low-power dissipation state, TA can be extended to this range as long as TJ does not exceed TJmax (see Section 7.2:
Thermal characteristics).
Table 21. Operating conditions at power-up / power-down
Symbol
Parameter
Conditions
Min
Max
Unit
tVDD
VDD rise time rate
-
0
µs/V
VDD fall time rate
10
tVDDA
VDDA rise time rate
-
0
VDDA fall time rate
10
tVDDUSB
VDDUSB rise time rate
-
0
VDDUSB fall time rate
10
Table 22. Embedded reset and power control block characteristics
Symbol
Parameter
Conditions(1)
Min
Typ
Max
Unit
tRSTTEMPO(2)
Reset temporization after
BOR0 is detected
VDD rising
-
250
400
μs
VBOR0(2)
Brown-out reset threshold 0
Rising edge
1.62
1.66
1.7
V
Falling edge
1.6
1.64
1.69
VBOR1
Brown-out reset threshold 1
Rising edge
2.06
2.1
2.14
V
Falling edge
1.96
2
2.04
VBOR2
Brown-out reset threshold 2
Rising edge
2.26
2.31
2.35
V
Falling edge
2.16
2.20
2.24
VBOR3
Brown-out reset threshold 3
Rising edge
2.56
2.61
2.66
V
Falling edge
2.47
2.52
2.57
VBOR4
Brown-out reset threshold 4
Rising edge
2.85
2.90
2.95
V
Falling edge
2.76
2.81
2.86
VPVD0
Programmable voltage
detector threshold 0
Rising edge
2.1
2.15
2.19
V
Falling edge
2
2.05
2.1
VPVD1
PVD threshold 1
Rising edge
2.26
2.31
2.36
V
Falling edge
2.15
2.20
2.25



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