OA1MPA datasheet(10/28 Pages) STMICROELECTRONICS

10 / 28 page

Electrical characteristics

OA1MPA, OA2MPA, OA4MPA

10/28

DocID025992 Rev 1

VCC+ = 5 V with VCC- = 0 V, Vicm = VCC/2, T = 25 °C, and RL = 10 k connected to VCC/2

(unless otherwise specified)

Table 6. Electrical characteristics

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

DC performance

Vio

Input offset voltage

T = 25 °C

200

V

-40 °C < T< 85 °C

850

-40 °C < T< 125 °C

1200

V

io/T

Input offset voltage drift

-40 °C < T< 125 °C(1)

V/°C

V

Long-term input offset voltage

drift

T = 25 °C(2)

0.7

Iio

Input offset current

(Vout = VCC/2)

T = 25 °C

10(3)

-40 °C < T< 125 °C

300(3)

Iib

Input bias current

(Vout = VCC/2)

T = 25 °C

10(3)

-40 °C < T< 125 °C

300(3)

CMR

Common mode rejection ratio

20 log (

V

icm/Vio)

Vicm = 0 V to VCC,

Vout = VCC/2, RL > 1 M

T = 25 °C

-40 °C < T< 125 °C

SVR

Supply voltage rejection ratio

20 log (

V

CC/Vio)

VCC = 1.5 to 5.5 V, Vic = 0 V,

RL > 1 M

T = 25 °C

-40 °C < T< 125 °C

Avd

Large signal voltage gain

Vout = 0.5 V to (VCC - 0.5 V)

T = 25 °C

-40 °C < T< 125 °C

EMIRR

EMI rejection ratio

EMIRR = 20 log

(VRFpeak/Vio)

VRF = 100 mVRFpeak, f = 400 MHz

38(4)

VRF = 100 mVRFpeak, f = 900 MHz

50(4)

VRF = 100 mVRFpeak, f = 1800 MHz

60(4)

VRF = 100 mVRFpeak, f = 2400 MHz

63(4)

VOH

High level output voltage

(VOH = VCC - Vout)

T = 25 °C

-40 °C < T< 125 °C

VOL

Low level output voltage

T = 25 °C

-40 °C < T< 125 °C

Iout

Isink (Vout = VCC)

T = 25 °C

-40 °C < T< 125 °C

Isource (Vout = 0 V)

T = 25 °C

-40 °C < T< 125 °C

V

month

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