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LCP12 Datenblatt(PDF) 4 Page - STMicroelectronics |
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LCP12 Datenblatt(HTML) 4 Page - STMicroelectronics |
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4 / 10 page ![]() Characteristics LCP12 4/10 DocID17500 Rev 4 Figure 4. Relative variation of holding current versus junction temperature Figure 5. Maximum non repetitive surge peak on state current versus overload duration Figure 6. Capacitance versus reverse applied voltage (typical values) with VGn = -90 V and VGp = +90 V Table 7. Recommended gate capacitance Symbol Component Min. Typ. Max. Unit Cn, Cp Gate decoupling capacitance 100 220 nF 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 -40 -20 0 20 40 60 80 100 120 IH[Tj]/ IH[Tj=25 °C] T (°C) 0 2 4 6 8 10 12 14 16 18 20 0.01 0.1 1 10 100 1000 F = 50 Hz T j initial=25 °C t(s) ITSM (A) 20 40 60 80 100 0 10 20 30 40 50 60 70 Vline (V) C (pF) line + line - |
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