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MP6759 Datenblatt(PDF) 5 Page - Toshiba Semiconductor |
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MP6759 Datenblatt(HTML) 5 Page - Toshiba Semiconductor |
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5 / 6 page ![]() MP6759 2002-11-20 5 Collector-emitter voltage VCE (V) Reverse Bias Area Rth – tw Pulse width tw (s) Collector-emitter voltage VCE (V) Safe Operating Area 40 0.1 0.1 1 10 100 1000 1 10 100 IC max (pulsed)* 1 s* 100 µs* DC operation IC max (continuous) 50 µs* *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. 1 ms* 10 ms* 0 0 200 400 600 800 10 20 30 Tj ≤ 125°C VGE = ±15 V RG = 100 Ω 0.001 0.01 0.1 1 10 100 1000 0.01 0.03 0.05 0.1 0.3 0.5 1 3 5 10 30 50 100 Tc = 25°C Diode IGBT |
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