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SW4N40DC

Nov. 2015. Rev. 2.0

1/6

N-channel Enhanced mode TO-251S/TO-252 MOSFET

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-251S

TO-252

V

DSS

Drain to source voltage

400

V

I

D

Continuous drain current (@T

4*

A

Continuous drain current (@T

2.5*

A

I

DM

Drain current pulsed

(note 1)

16

A

V

GS

Gate to source voltage

±30

V

E

AS

Single pulsed avalanche energy

(note 2)

142

mJ

E

AR

Repetitive avalanche energy

(note 1)

20

mJ

dv/dt

Peak diode recovery dv/dt

(note 3)

5

V/ns

P

D

Total power dissipation (@T

104

83.3

W

0.8

0.7

T

Operating junction temperature & storage temperature

-55 ~ + 150

T

L

Maximum lead temperature for soldering

purpose, 1/8 from case for 5 seconds.

300

Thermal characteristics

Symbol

Parameter

Value

Unit

TO-251S

TO-252

R

thjc

Thermal resistance, Junction to case

1.2

1.5

R

thja

Thermal resistance, Junction to ambient

92

85

*. Drain current is limited by junction temperature.

BV

I

D

: 4A

R

1. Gate 2. Drain 3. Source

TO-251S

1

2

3

Order Codes

Item

Sales Type

Marking

Package

Packaging

1

SWSI 4N40DC

SW4N40DC

TO-251S

TUBE

2

SWD 4N40DC

SW4N40DC

TO-252

REEL

1

2

3

Features

 High ruggedness

 Low R

 Low Gate Charge (Typ 11.7nC)

 Improved dv/dt Capability

 100% Avalanche Tested

 Application:LED, DC-DC

General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics.

TO-252

1

2

3