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Mar. 2017. Rev. 5.0

1/7

SW7N70D

N-channel Enhanced mode TO-252/TO-251N/TO-262N MOSFET

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-252

TO-251N TO-262N

V

DSS

Drain to source voltage

700

V

I

D

Continuous drain current (@T

7*

A

Continuous drain current (@T

4.4*

A

I

DM

Drain current pulsed

(note 1)

28

A

V

GS

Gate to source voltage

± 30

V

E

AS

Single pulsed avalanche energy

(note 2)

431

mJ

E

AR

Repetitive avalanche energy

(note 1)

30

mJ

dv/dt

Peak diode recovery dv/dt

(note 3)

5

V/ns

P

D

Total power dissipation (@T

179

187

231

W

1.4

1.5

1.9

T

Operating junction temperature & storage temperature

-55 ~ + 150

T

L

Maximum lead temperature for soldering

purpose, 1/8 from case for 5 seconds.

300

Thermal characteristics

Symbol

Parameter

Value

Unit

TO-252

TO-251N TO-262N

R

thjc

Thermal resistance, Junction to case

0.70

0.67

0.54

R

thja

Thermal resistance, Junction to ambient

91

67

*. Drain current is limited by junction temperature.

BV

I

D

: 7A

R

1. Gate 2. Drain 3. Source

TO-252

1

2

3

Order Codes

Item

Sales Type

Marking

Package

Packaging

1

SW D 7N70D

SW7N70D

TO-252

REEL

2

SW N 7N70D

SW7N70D

TO-251N

TUBE

3

SW J 7N70D

SW7N70D

TO-262N

TUBE

1

2

3

Features

 High ruggedness

 Low R

 Low Gate Charge (Typ 30nC)

 Improved dv/dt Capability

 100% Avalanche Tested

 Application:LED, Charge, TV-Power

General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics.

TO-251N

1

2

3

TO-262N

1

2

3