TSZ182 datasheet(5/39 Pages) STMICROELECTRONICS

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TSZ182

Electrical characteristics

DocID029836 Rev 1

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Electrical characteristics

Table 3: Electrical characteristics at VCC+ = 2.2 V with VCC- = 0 V, Vicm = VCC/2, T = 25 °C, and

RL = 10

kΩ connected to VCC/2 (unless otherwise specified)

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

DC performance

Vio

Input offset voltage

T = 25 °C

3.5

µV

-40 °C < T< 125 °C

ΔVio/ΔT

Input offset voltage drift (1)

-40 °C < T< 125 °C

0.1

µV/°C

Iib

Input bias current (Vout = VCC/2)

T = 25 °C

200 (2)

-40 °C < T< 125 °C

300 (2)

Iio

Input offset current (Vout = VCC/2)

T = 25 °C

400 (2)

-40 °C < T< 125 °C

600 (2)

CMR1

Common-mode rejection ratio,

20 log (ΔVicm/ΔVio), Vic = 0 V to VCC,

Vout = VCC/2, RL > 1

MΩ

T = 25 °C

115

-40 °C < T< 125 °C

CMR3

Common mode rejection ratio,

20 log (ΔVicm/ΔVio), Vic = 1.1 V to VCC,

Vout = VCC/2, RL > 1

MΩ

T = 25 °C

102

120

-40 °C < T< 125 °C

100

Avd

Large signal voltage gain,

Vout = 0.5 V to (Vcc - 0.5 V)

T = 25 °C

112

130

-40 °C < T< 125 °C

100

VOH

High-level output voltage, VOH = Vcc - Vout

T = 25 °C

-40 °C < T< 125 °C

VOL

Low-level output voltage

T = 25 °C

-40 °C < T< 125 °C

Iout

Isink (Vout = VCC)

T = 25 °C

-40 °C < T< 125 °C

2.5

Isource (Vout = 0 V)

T = 25 °C

3.5

-40 °C < T< 125 °C

ICC

Supply current

(per channel, Vout = VCC/2, RL > 1

MΩ)

T = 25 °C

0.7

-40 °C < T< 125 °C

1.2

AC performance

GBP

Gain bandwidth product

T = 25 °C,

RL = 10

kΩ,

CL = 100 pF

1.6

2.3

MHz

-40 °C < T< 125 °C,

RL = 10

kΩ,

CL = 100 pF

1.2

Φm

Phase margin

RL = 10

kΩ,

CL = 100 pF

degrees

Gain margin

Slew rate (3)

T = 25 °C

4.6

V/µs

-40 °C < T< 125 °C

2.5

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