STS5N150 datasheet(1/6 Pages) STMICROELECTRONICS

Teilenummer	STS5N150

Bauteilbeschribung	N-CHANNEL 150V - 0.045 OHM - 5A SO-8 LOW GATE CHARGE STripFET??POWER MOSFET

PDF	6 Pages

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Hersteller	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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TARGET DATA

June 2003

This is preliminary information on a new product forseen to be developped. Details are subject to change without notice

STS5N150

N-CHANNEL 150V - 0.045

Ω - 5A SO-8

LOW GATE CHARGE STripFET™ POWER MOSFET

s

TYPICAL RDS(on) = 0.045 Ω

s

EXTREMELY HIGH dv/dt CAPABILITY

s

EXTREMELY LOW GATE CHARGE

DESCRIPTION

This MOSFET series realized with STMicroelectronics

unique STripFET process has specifically been designed

to minimize input capacitance and gate charge. It is

therefore suitable as primary switch in advanced high-

efficiency, high-frequency isolated DC-DC converters for

Telecom and Computer applications. It is also intended

for any applications with low gate drive requirements.

APPLICATIONS

s

HIGH-EFFICIENCY DC-DC CONVERTERS

s

UPS AND MOTOR CONTROL

Ordering Information

TYPE

VDSS

RDS(on)

ID

STS5N150

150 V

<0.06

Ω

5 A

SALES TYPE

MARKING

PACKAGE

PACKAGING

STS5N150

S5N150

SO-8

TAPE & REEL

SO-8

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

(

•) Pulse width limited by safe operating area.

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS = 0)

150

V

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

150

V

VGS

Gate- source Voltage

± 20

V

ID

Drain Current (continuous) at TC = 25°C

5A

ID

Drain Current (continuous) at TC = 100°C

3A

IDM(•)

Drain Current (pulsed)

20

A

Ptot

Total Dissipation at TC = 25°C

2.5

W

Tstg

Storage Temperature

-55 to 150

°C

Tj

Operating Junction Temperature

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