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72425 Datenblatt(PDF) 2 Page - Vishay Siliconix

Teilenummer 72425
Bauteilbeschribung  N-Channel 150-V (D-S) 175째C MOSFET
PDF  3 Pages
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Hersteller  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

72425 Datenblatt(HTML) 2 Page - Vishay Siliconix

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SPICE Device Model SUP80N15-20L
Vishay Siliconix
www.vishay.com
Document Number: 72425
2
12-Jun-04
SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
Simulated
Data
Measured
Data
Unit
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
1.7
V
On-State Drain Current
a
ID(on)
VDS = 5 V, VGS = 10 V
314
A
VGS = 10 V, ID = 30 A
0.016
0.016
VGS = 10 V, ID = 30 A, TJ = 125°C
0.023
VGS = 10 V, ID = 30 A, TJ = 175°C
0.026
Drain-Source On-State Resistance
a
rDS(on)
VGS = 4.5 V, ID = 20 A
0.017
Ω
Forward Transconductance
a
gfs
VDS = 15 V, ID = 30 A
93
S
Forward Voltage
a
VSD
IS = 80 A, VGS = 0 V
0.92
1
V
Dynamic
b
Input Capacitance
Ciss
6590
6500
Output Capacitance
Coss
510
520
Reverse Transfer Capacitance
Crss
VGS = 0 V, VDS = 25 V, f = 1 MHz
320
270
Pf
Total Gate Charge
c
Qg
114
110
Gate-Source Charge
c
Qgs
21
21
Gate-Drain Charge
c
Qgd
VDS = 50 V, VGS = 10 V, ID = 80 A
33
33
NC
Turn-On Delay Time
c
td(on)
176
20
Rise Time
c
tr
43
100
Turn-Off Delay Time
c
td(off)
43
70
Fall Time
c
tf
VDD = 50 V, RL = 0.93 Ω
ID ≅ 80 A, VGEN = 10 V, RG = 2.5 Ω
49
135
Ns
Notes
a.
Pulse test; pulse width
≤ 300 µs, duty cycle ≤ 2%.
b.
Guaranteed by design, not subject to production testing.
c.
Independent of operating temperature.



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