| Datenblatt-Suchmaschine für elektronische Bauteile |
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BD825 Datenblatt(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BD825 Datenblatt(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon NPN Power Transistor BD825 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 45 V VCE(sat) Collector-Emitter Saturation Voltage IC= 500mA; IB= 50mA 0.5 V VBE(on) Base-Emitter On Voltage IC= 0.5A ; VCE= 2V 1.0 V ICBO Collector Cutoff Current VCB= 30V; IE= 0 0.1 uA VCB= 30V; IE= 0; TC= 125℃ 10 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 10 uA hFE-1 DC Current Gain IC= 5mA ; VCE= 2V 25 hFE-2 DC Current Gain IC= 150mA ; VCE= 2V 40 250 hFE-3 DC Current Gain IC= 500mA ; VCE= 2V 25 fT Current-Gain—Bandwidth Product IC= 50mA ; VCE= 5V 250 MHz |
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