| Datenblatt-Suchmaschine für elektronische Bauteile |
|
STN210D Datenblatt(PDF) 2 Page - Stanson Technology |
|
|
|||||||||||||||||||||||||||||
STN210D Datenblatt(HTML) 2 Page - Stanson Technology |
|
2 / 9 page ![]() STN210D N Channel Enhancement Mode MOSFET 80.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2009, Stanson Corp. ST210D 2016 V1 ABSOULTE MAXIMUM RATINGS (Ta = 25 Unless otherwise noted ) Parameter Symbol Typical Unit Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (TJ=150 ) TA=25 TA=100 ID 80 55 A Pulsed Drain Current IDM 360 A Continuous Source Current (Diode Conduction) IS 23 A Power Dissipation TA=25 PD 150 W Operation Junction Temperature TJ 175 Storgae Temperature Range TSTG -55/175 Thermal Resistance-Junction to Ambient RθJA 110 /W |
|
|
Link URL |
| War ALLDATASHEET hilfreich? [ DONATE ] |
Über Alldatasheet | Werbung | Kontakt | Privatsphäre und Datenschutz | Link zum Datenblatt | Linktausch | Hersteller All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |