2SB1424 datasheet(1/4 Pages) JIANGSU

Teilenummer	2SB1424

Bauteilbeschribung	SOT-89-3L Plastic-Encapsulate Transistors

PDF	4 Pages

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Hersteller	JIANGSU [Jiangsu Changjiang Electronics Technology Co., Ltd]

Direct Link	http://www.cj-elec.com/en/

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SOT-89-3L

1. BASE

2. COLLECTOR

3. EMITTER

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-89-3L Plastic-Encapsulate Transistors

2SB1424

TRANSISTOR (PNP)

FEATURES



Excellent DC

current gain



Low

collector-emitter saturation voltage



Complement the 2SD2150

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

V(BR)CBO

IC=-50µA,IE=0

-20

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=-1mA,IB=0

-20

V

Emitter-base breakdown voltage

V(BR)EBO

IE=-50µA,IC=0

-6

V

Collector cut-off current

ICBO

VCB=-20V,IE=0

-0.1

µA

Emitter cut-off current

IEBO

VEB=-5V,IC=0

-0.1

µA

DC current gain

hFE

VCE=-2V, IC=-0.1A

120

390

Collector-emitter saturation voltage

VCE(sat)

IC=-2A,IB=-0.1A

-0.5

V

Collector output capacitance

Cob

VCB=-10V,IE=0, f=1MHz

35

pF

Transition frequency

fT

VCE=-2V,IC=-0.5A,

f=100MHz

240

MHz

CLASSIFICATION OF hFE

RANK

Q

R

RANGE

120–270

180–390

MARKING

AEQ

AER

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

-20

V

VCEO

Collector-Emitter Voltage

-20

V

VEBO

Emitter-Base Voltage

-6

V

IC

Collector Current

-3

A

PC

Collector Power Dissipation

500

mW

RθJA

Thermal Resistance From Junction To Ambient

250

℃/W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature

-55~+150

℃

www.cj-elec.com

1

www.cj-elec.com

D,Oct,2015

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