| Datenblatt-Suchmaschine für elektronische Bauteile |
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KBJ401 Datenblatt(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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KBJ401 Datenblatt(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 2 page ![]() Elektronische Bauelemente KBJ4005 ~ KBJ410 Voltage 50V ~ 1000V 4.0Amp Glass Passivated Bridge Rectifiers 25-Jun-2015 Rev. A Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Io : 4A VRRM : 50~1000V Glass passivated chip High surge forward current capability APPLICATIONS General purpose 1 phase Bridge rectifier applications MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (Rating 25°C ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive or inductive load. For capacitive load, de-rate current by 20%.) Part Number Parameter Symbol KBJ 4005 KBJ 401 KBJ 402 KBJ 404 KBJ 406 KBJ 408 KBJ 410 Unit Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 V With heatsink TC =108°C 4 Average Rectified Output Current @ 60Hz sine wave, R-load Without heatsink TA =25°C IO 2.3 A Surge (Nonrepetitive) Forward Current @ 60HZ sine wave, 1 cycle, TJ=25°C IFSM 120 A Current Squared Time 1 I 2t 60 A 2S Dielectric Strength@ Terminals to case ,AC 1 minute VDIS 2 KV Mounting Torque@ Recommend torque : 5kg.cm Tor 8 Kg.cm Peak Forward Voltage@ IFM=2A, Pulse measurement, Rating of per diode VFM 1.05 V Peak Reverse Current@ VRM=VRRM , Pulse measurement, Rating of per diode IRRM 10 µA Without heatsink RθJA 30 Thermal Resistance With heatsink RθJC 5.5 °C / W Junction and Storage temperature range TJ,TSTG -55~+150 °C Notes: 1. 1ms≤t<8.3ms TJ=25°C ,Rating of per diode 4KBJ Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 24.7 25.3 J 0.6 0.8 B 14.7 15.3 K 7.3 7.7 C 4.4 4.8 L 1.7 2.1 D 17.0 18.0 M 2.0 TYP. E 3.0 x 45° N 1.05 1.45 F 3.1 3.4 P 3.3 3.8 G 4.0 Q 9.5 10.1 H 3.2 3.4 R 3.1 3.4 I 0.9 1.1 S 3.4 3.8 |
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