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BCP55 Datenblatt(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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BCP55 Datenblatt(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 2 page ![]() Elektronische Bauelemente BCP55 1A , 60V NPN Silicon Medium Power Transistor 11-Aug-2014 Rev. A Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES For AF driver and output stages High collector current Low collector-emitter saturation voltage CLASSIFICATION OF hFE Product-Rank BCP55-16 Range 100~250 PACKAGE INFORMATION Package MPQ Leader Size SOT-223 2.5K 13’ inch ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 60 V Emitter-Base Voltage VEBO 5 V Collector Current -Continuous IC 1 A Collector Power Dissipation PD 1.5 W Typical Thermal Resistance RθJA 83.3 °C /W Storage Temperature TSTG -65~+150 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Max. Unit Test Conditions Collector-base breakdown voltage V(BR)CBO 60 - V IC=0.1mA , IE=0 Collector-emitter breakdown voltage V(BR)CEO 60 - V IC= 10mA, IB=0 Emitter-base breakdown voltage V(BR)EBO 5 - V IE= 10µA, IC=0 Collector cut-off current ICBO - 100 nA VCB= 30V, IE=0 25 - VCE= 2V, IC= 5mA 100 250 VCE= 2V, IC= 150mA DC current gain hFE 25 - VCE= 2V, IC= 500mA Collector-emitter saturation voltage 1 VCE(sat) - 0.5 V IC=500mA, IB= 50mA Base-emitter voltage 1 VBE(on) - 1 V VCE= 2V, IC= 500mA Transition frequency f T 100 - MHz VCE=10V, IC=50mA, f=100MHz Top View 1 2 3 4 A M B D L K F G H J E C Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 6.20 6.70 G - 0.10 B 6.70 7.30 H - - C 3.30 3.70 J 0.25 0.35 D 1.42 1.90 K - - E 4.50 4.70 L 2.30 REF. F 0.60 0.82 M 2.90 3.10 SOT-223 |
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