Elektronische Bauelemente

SSD35P03

P-Ch Enhancement Mode Power MOSFET

31-May-2017 Rev. A

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test conditions

Drain-Source Breakdown Voltage

-30

-

-

V

Gate Threshold Voltage

-1

-

-2.5

V

Forward Transfer conductance

-

20

-

S

Gate-Source Leakage Current

-

-

±100

nA

-

-

-1

Drain-Source Leakage Current

-

-

-5

µA

-

-

28

Static Drain-Source On-Resistance

3

-

-

40

m

Total Gate Charge

-

18

-

Gate-Source Charge

-

3.3

-

Gate-Drain Change

-

4.9

-

nC

Turn-on Delay Time

-

7

-

Rise Time

-

11

-

Turn-off Delay Time

-

27

-

Fall Time

-

8

-

nS

Input Capacitance

-

1345

-

Output Capacitance

-

194

-

Reverse Transfer Capacitance

-

158

-

pF

f=1.0MHz

Source-Drain Diode

Forward On Voltage

3

-

-

-1.2

V

Reverse Recovery Time

-

24

-

nS

Reverse Recovery Charge

-

14

-

nC

Notes:

1.

The date tested by surface mounted on a 1 inch2 FR-4 board with 2oz copper.

2.

The power dissipation is limited by 150°C junction temperature.

3.

The data tested by pulsed, pulse width

300us,duty cycle

2%

≦

≦

.