SSG4504 datasheet(1/7 Pages) SECOS

Teilenummer	SSG4504

Bauteilbeschribung	N & P-Ch Enhancement Mode Power MOSFET

PDF	7 Pages

Scroll/Zoom	100%

Hersteller	SECOS [SeCoS Halbleitertechnologie GmbH]

Direct Link	http://www.secosgmbh.com

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Elektronische Bauelemente

SSG4504

N & P-Ch Enhancement Mode Power MOSFET

N-Ch: 7.2 A, 40 V, RDS(ON) 30 mΩ

Ω

P-Ch: -6.5A, -40 V, RDS(ON) 40 mΩ

Ω

28-Aug-2017 Rev. B

Page 1 of 7

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

4504SS

= Date Code

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

DESCRIPTION

The SSG4504 is the highest performance trench

N-ch and P-ch MOSFETs with extreme high cell density,

which provide excellent RDSON and gate charge for most

of the synchronous buck converter applications.

The SSG4504 meet the RoHS and Green Product

requirement with full function reliability approved.

FEATURES

Advanced high cell density Trench technology

Super Low Gate Charge

Green Device Available

MARKING

PACKAGE INFORMATION

ABSOLUTE MAXIMUM RATINGS

Ratings

Parameter

Symbol

N-Ch

P-Ch

Unit

Drain-Source Voltage

VDS

40

-40

V

Gate-Source Voltage

VGS

±20

V

TA=25°C

7.2

-6.5

A

Continuous Drain Current

1, V

GS@10V

TA=100°C

ID

5.6

-5.1

A

Pulsed Drain Current

3

IDM

14.5

-13

A

Total Power Dissipation

TC=25°C

PD

2.5

W

Operating Junction and Storage Temperature Range

TJ, TSTG

-55~150

°C

Thermal Data

Thermal Resistance Junction-ambient

1

RθJA

85

Thermal Resistance Junction-ambient

2

RθJA

135

Thermal Resistance Junction-case

1

RθJC

50

°C / W

Package

MPQ

Leader Size

SOP-8

2.5K

13 inch

SOP-8

A

H

B

M

D

C

J

K

F

L

E

N

G

G2

G1

S1

S2

D2

D1

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

5.79

6.20

H

0.33

0.51

B

4.70

5.11

J

0.375 REF.

C

3.80

4.00

K

45°REF.

D

0°

8°

L

1.3

1.752

E

0.40

1.27

M

0

0.25

F

0.10

0.25

N

0.25 REF.

G

1.27 TYP.

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