SSG9971A datasheet(1/4 Pages) SECOS

Teilenummer	SSG9971A

Bauteilbeschribung	Dual-N Enhancement Mode Power MOSFET

PDF	4 Pages

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Hersteller	SECOS [SeCoS Halbleitertechnologie GmbH]

Direct Link	http://www.secosgmbh.com

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Elektronische Bauelemente

SSG9971A

5A, 60V, RDS(ON) 36mΩ

Ω

Dual-N Enhancement Mode Power MOSFET

02-Jun-2017 Rev. B

Page 1 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

A

H

B

M

D

C

J

K

F

L

E

N

G

9971ASS

= Date Code

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

DESCRIPTION

The SSG9971A is the highest performance trench

dual N-ch MOSFETs with extreme high cell density,

which provide excellent RDSON and gate charge for

most of the synchronous buck converter applications .

The SSG9971A meet the RoHS and Green Product

requirement with full function reliability approved.

FEATURES

Advanced high cell density Trench technology

Super Low Gate Charge

Green Device Available

MARKING CODE

PACKAGE INFORMATION

Package

MPQ

Leader Size

SOP-8

2.5K

13 inch

ABSOLUTE MAXIMUM RATINGS (T

A=25°C unless otherwise specified)

Parameter

Symbol

Rating

Unit

Drain-Source Voltage

VDS

60

V

Gate-Source Voltage

VGS

±20

V

TA=25°C

5

Continuous Drain Current

1@ V

GS=10V

TA=70°C

ID

4

A

Pulsed Drain Current

3

IDM

14

A

Power Dissipation@ TA=25°C

PD

1.5

W

Operating Junction & Storage Temperature Range

TJ, TSTG

-55~150

°C

Thermal Resistance Rating

Thermal Resistance Junction-Ambient

1

RθJA

85

°C/W

Thermal Resistance Junction-Ambient

2

RθJA

135

°C/W

Thermal Resistance Junction-Case

1

RΘjc

50

°C/W

SOP-8

G

S

G

S

D

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

5.79

6.20

H

0.33

0.51

B

4.70

5.11

J

0.375 REF.

C

3.80

4.00

K

45°REF.

D

0°

8°

L

1.3

1.752

E

0.40

1.27

M

0

0.25

F

0.10

0.25

N

0.25 REF.

G

1.27 TYP.

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